发明名称 |
Nitride semiconductor substrate and method of producing same |
摘要 |
A nitride semiconductor substrate having a rugged surface being lapped by whetting granules to roughness between Rms5 nm and Rms200 nm, which has a function of reducing dislocations of a GaN, InGaN or AlGaN layer epitaxially grown on the lapped substrate by gathering dislocations in the epi-layer to boundaries of holes, pulling the dislocations to bottoms of the holes. Higher roughness of the nitride substrate degrades morphology of an epitaxially-grown layer thereon but reduces dislocation density to a lower level. Morphology of the epi-layer contradicts the dislocation density of the epi-layer. The nitride semiconductor substrate can reduce dislocation density and can be low cost and useful substrates.
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申请公布号 |
US7390747(B2) |
申请公布日期 |
2008.06.24 |
申请号 |
US20050262823 |
申请日期 |
2005.11.01 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
IRIKURA MASATO;MOCHIDA YASUSHI;NAKAYAMA MASAHIRO |
分类号 |
C30B29/38;H01L21/302;C30B29/40;H01L21/20;H01L21/205;H01L21/304;H01L21/461 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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