发明名称 Semiconductor memory device having pre-emphasis signal generator
摘要 A semiconductor memory device includes a primary output driver which outputs a data signal through an output terminal; a secondary output driver which is connected to the output terminal and performs a pre-emphasis operation; and a pre-emphasis signal generator which outputs a pre-emphasis signal to enable the secondary output driver The pre-emphasis signal generator includes a auto pulse generator which generates an auto pulse in response to a transition of a control signal; a delay circuit which receives the auto pulse output from the auto pulse generator, delays the auto pulse by a predetermined period, and outputs a pre-emphasis signal; and a delay control unit which applies a delay control signal to the delay circuit and controls a delay amount of the delay circuit.
申请公布号 US7391238(B2) 申请公布日期 2008.06.24
申请号 US20060429296 申请日期 2006.05.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM HYUN-JIN;PARK KWANG-IL;LEE WOO-JIN
分类号 H03K19/094;H03K19/0175 主分类号 H03K19/094
代理机构 代理人
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