发明名称 |
Semiconductor memory device having pre-emphasis signal generator |
摘要 |
A semiconductor memory device includes a primary output driver which outputs a data signal through an output terminal; a secondary output driver which is connected to the output terminal and performs a pre-emphasis operation; and a pre-emphasis signal generator which outputs a pre-emphasis signal to enable the secondary output driver The pre-emphasis signal generator includes a auto pulse generator which generates an auto pulse in response to a transition of a control signal; a delay circuit which receives the auto pulse output from the auto pulse generator, delays the auto pulse by a predetermined period, and outputs a pre-emphasis signal; and a delay control unit which applies a delay control signal to the delay circuit and controls a delay amount of the delay circuit.
|
申请公布号 |
US7391238(B2) |
申请公布日期 |
2008.06.24 |
申请号 |
US20060429296 |
申请日期 |
2006.05.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYUN-JIN;PARK KWANG-IL;LEE WOO-JIN |
分类号 |
H03K19/094;H03K19/0175 |
主分类号 |
H03K19/094 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|