| 摘要 |
A reflective mask blank has a substrate ( 11 ) on which a reflective layer ( 12 ) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer ( 16 ) for absorbing the exposure light are successively formed. The absorber layer ( 16 ) has an at least two-layer structure including as a lower layer an exposure light absorbing layer ( 14 ) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer ( 15 ) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
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