发明名称 |
Method of forming a digitalized semiconductor structure |
摘要 |
A multiple-gate FET structure includes a semiconductor substrate. A gate region is formed on the semiconductor substrate. The gate region comprises a gate portion and a channel portion. The gate portion has at least two opposite vertical surfaces adjacent to the channel portion. A source region abuts the gate region at one end, and a drain diffusion region abuts the gate region at the other end.
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申请公布号 |
US7390701(B2) |
申请公布日期 |
2008.06.24 |
申请号 |
US20050087781 |
申请日期 |
2005.03.23 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
CHENG ZHIYUAN;FITZGERALD EUGENE A.;ANTONIADIS DIMITRI |
分类号 |
H01L21/00;H01L21/336;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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