| 摘要 |
A solid-state imaging device and an imaging apparatus are provided to supply hydrogen to a photoelectric conversion unit, a transistor or a transfer resistor effectively by forming a hydrogen desorbing layer, and a hydrogen shielding layer. A pixel array unit(20) configures an imaging area by the plural pixels(16) which are arranged to the two dimensional direction. A vertical scanning circuit(21) controls a readout operation of a pixel signal by scanning each pixel of the pixel array to the vertical direction. A load MOS transistor circuit(24) controls a vertical signal line(28) derived from each pixel column of the pixel array. A CDS circuit(25) fetches the pixel signal which is readout from the each pixel column, and removes the noise by the relative double sampling process. A horizontal select transistor circuit(26) outputs the pixel signal of the CDS circuit to a horizontal signal line(27). A horizontal scanning circuit(22) controls output of the pixel signal by selecting sequentially the horizontal select transistor circuit toward the vertical direction.
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