发明名称 Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method
摘要 In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than that at the second resonance wavelength on the side of long wavelength. An absorption coefficient of an optical absorption layer when no electric field is applied is small for the first and second resonance wavelengths, and when an electric field is applied, an absorption coefficient of the optical absorption layer for the first resonance wavelength on the side of short wavelength is larger than that for the second resonance wavelength on the side of long wavelength.
申请公布号 US7391800(B2) 申请公布日期 2008.06.24
申请号 US20060344421 申请日期 2006.02.01
申请人 RICOH COMPANY, LTD. 发明人 TAKAHASHI TAKASHI
分类号 H01S5/00 主分类号 H01S5/00
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