PROCESS FOR REMOVING A RESIDUE FOR SILICIDE PROCESS

摘要

A residue removing process for a silicide process is provided to avoid the generation of a defect caused by residue in a subsequent process by performing a cleaning process before a cobalt sputtering process and after the residue on a wafer having undergone an etch process or an ion implantation process is cleaned by using HF. Photoresist remaining on a wafer is stripped in an ashing process(S10). The wafer is cleaned by using SC1(S20). The wafer is cleaned by using HF(S30). The wafer is cleaned prior to a cobalt sputtering process so that the residue existing on the wafer is finally removed in a pre-sputtering process(S40). In the pre-sputtering process, deionized water is injected to the surface of the wafer to remove the residue while the water is rotated.