MASK USED FOR MANUFACTRUING OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTRUING THE MASK

摘要

A mask for use in a semiconductor device manufacture and a method for manufacturing the mask are provided to improve a light blocking rate of a pattern by forming a chrome pattern having an excellent light blocking rate. An MoSiN layer is formed on a base substrate(10). A chrome layer is formed on the MoSiN layer. A photoresist pattern is formed on the MoSiN layer. The MoSiN layer is patterned by using the photoresist pattern as an etch mask to form a MoSiN pattern(30) on the chrome layer. The chrome layer is patterned by using the photoresist pattern as an etch mask to form a chrome pattern(20) on the base substrate. When the MoSiN layer is formed, a thickness of the MoSiN layer is 600 mum to 800 mum. When the chrome layer is formed, a thickness of the chrome is 100 mum to 500 mum. When the MoSiN pattern is formed, the MoSiN layer is dry-etched. The MoSiN layer is etched by an ICP(Inductively Coupled Plasma) etching process.