| 摘要 |
A deep sub-micron MOS preamplifier with a thick oxide input stage transistor is provided to operate a transistor at a high voltage level by increasing the thickness of a gate oxide layer of the transistor. A condenser microphone assembly includes a condenser microphone converter(3) and a deep sub-micron MOS(Metal Oxide Semiconductor) IC(Integrated Circuit) die(6). The condenser microphone converter includes a diaphragm and a rear plate member, disposed adjacent to each other, having an air gap therebetween. The deep sub-micron MOS IC die includes a preamplifier(7) having a first signal input terminal(13) for receiving electrical signals, which are generated from the condenser microphone converter. The first signal input terminal is connected to an input stage of the preamplifier. The input stage is formed by a thick oxide film transistor. |
