| 摘要 |
<p>A method of preventing pattern collapse in a semiconductor device is provided to form a sub-nanoscale unevenness onto a surface of an oxide layer through wet etching before HMDS(Hexa Methyl Di Silazane) treatment, improving a manufacturing yield in semiconductor fabrication. A method of preventing pattern collapse in a semiconductor device comprises the steps of: depositing an oxide layer(110) to be patterned onto a semiconductor wafer; forming sub-nanoscale unevenness(150) by a wet etching using H3PO4 as etchant before subjecting an upper surface of the oxide layer to HMDS(Hexa Methyl Di Silazane) treatment; subjecting the upper surface of the oxide with sub-nanoscale unevenness to HMDS(Hexa Methyl Di Silazane) treatment for increasing bonding force; applying photoresist onto the upper surface of the oxide after the HMDS(Hexa Methyl Di Silazane) treatment; and forming oxide patterns by partially removing the oxide layer using the photoresist pattern as an etch mask.</p> |
