CHARGE TRAP MEMORY DEVICE USING NANODOT AS CHARGE TRAP SITE

摘要

A charge trap memory device using a nano dot as a charge trap site is provided to simultaneously improve a write-read characteristic and a charge retention characteristic by solving a thermal stability problem of a memory device including a conventional pure metal nano dot. A charge trap memory device(10) includes a gate structure(20) on a substrate(11). In the gate structure, a plurality of metal oxide nano dots are discontinuously disposed as a charge trap site. The gate structure can include a tunneling insulation layer(21), the metal oxide nano dot(23) formed on the tunneling insulation layer, a blocking insulation layer(25) formed on the metal oxide nano dot, and a gate electrode(27) formed on the blocking insulation layer. First and second impurity regions(13,15) can be formed on the substrate to come in contact with the tunneling insulation layer.