| 摘要 |
A method for evaluating a single crystalline silicon growing method is provided to easily observe a slip dislocation by wright-etching a necking portion and determining a necking length. A single crystalline silicon growing apparatus(15) is configured to pull up silicon melt(5) contained in a growing furnace(16) in which a single crystalline silicon is grown to a pulling furnace(17). A necking portion of a sample is wright-etched over 15 minutes. The sample is obtained through a single crystalline silicon growing method. The necking portion is inspected through an optical microscope. A point at which a pit shape is disappeared is set as a point at which a slip dislocation is disappeared so that a necking length for eliminating slip dislocation is determined. In order to discriminate the pit shape from a fine hole and residual contaminants, a depth of focus of the optical microscope is controller to classify an image having an apparent afterimage into a pit image.
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