| 摘要 |
A method for manufacturing single crystalline silicon is provided to eliminate a slip dislocation in a seed crystal by growing a necking with a diameter greater 1.5 times than a uniform necking diameter. A single crystalline silicon growing apparatus(15) is configured to pull up silicon melt(5) contained in a growing furnace(16) in which a single crystalline silicon is grown to a pulling furnace(17). Single crystalline silicon is grown from a seed crystal until a diameter of the single crystalline silicon becomes over 1.5 times of a final necking diameter. A process decreases the diameter of the single crystalline silicon and grows the single crystalline silicon with the final necking diameter of 3 to 5 cm, thereby eliminating a slip dislocation. A slip dislocation elimination point is a point at 180 mm over and 220 below from a lower portion of the seed crystal. The seed crystal has a crystal orientation and the grown single crystalline silicon has a crystal orientation .
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