| 摘要 |
<p>A quartz glass crucible which comprises a bottom part and a straight barrel part, the barrel part having a structure which comprises quartz glass layers and, sandwiched between these, a layer containing a crystallization acceleration ingredient, e.g., aluminum. Due to the constitution, when a silicon single crystal is pulled up, crystallization proceeds in that structure to heighten the high-temperature crucible strength. The straight barrel part of the crucible hence suffers neither deformation nor inward falling. Thus, the productivity of silicon single crystal can be heightened. Since the crystallization acceleration layer is sandwiched between the quartz glass layers, the crystallization acceleration ingredient such as aluminum or barium does not come into contact with the silicon melt or carbon susceptor. Thus, contamination by the dissolution of these does not occur. The crucible bottom has no crystallization acceleration layer. There is hence no fear that a thermal strain at completion of pulling up may cause cracks. No melt leakage occurs.</p> |
