发明名称 RANDOM ACCESS MEMORY WITH HIGH EXTENT OF FAULT TOLERANCE
摘要 FIELD: technological processes. ^ SUBSTANCE: invention is related to the sphere of automatics and computer equipment and is intended for increase of RAM fault tolerance in control systems of true time. Device consists of memory address register (1) redundant RAM (2) equipped with Hamming code, controller of Hamming code (3) register of memory data (4) adder by module two (5) diagnostic cash memory (6) two registers - inverters (7) and (8) input (9) and output (10) multiplexers, element OR (11) element AND (12), adder of word error bits threshold (13) and control box (14). ^ EFFECT: increase of fault tolerance in relation to single, double and triple combined faults and malfunctions; expansion of functional resources. ^ 5 dwg, 1 tbl
申请公布号 RU2327236(C2) 申请公布日期 2008.06.20
申请号 RU20050141193 申请日期 2005.12.29
申请人 FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE MOSKOVSKOE OPYTNO-KONSTRUKTORSKOE BJURO "MARS" (FGUP MOKB "MARS") 发明人 SYROV ANATOLIJ SERGEEVICH;SMIRNOV VIKTOR VLADIMIROVICH;SINEL'NIKOV VLADIMIR VASIL'EVICH;KARAVAJ MIKHAIL FEDOROVICH
分类号 G11C29/00;G06F11/07 主分类号 G11C29/00
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