METHOD OF PREPARING PASSIVATION LAYER IN ORGANIC DEVICE
摘要
A method of preparing a passivation layer in an organic device is provided to block external oxygen and moisture from being infiltrated into a nonvolatile polymer memory device and an organic light emitting diode by preparing the passivation layer with an atomic layer deposition method and a plasma processing method. A method of preparing a passivation layer in an organic device includes the steps of: adsorbing an organic metal source onto a surface of the organic device; injecting inert gas in order to remove the unabsorbed organic metal source; forming a metallic oxide layer on the surface of the organic device by injecting a source containing oxygen and a plasma and allowing the source and plasma to react a metal within the organic metal source; injecting the inert gas in order to remove a residual organic metal source without the metallic oxide layer; and plasma-processing the formed metallic oxide layer.
申请公布号
KR100840269(B1)
申请公布日期
2008.06.20
申请号
KR20070033114
申请日期
2007.04.04
申请人
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
发明人
PARK, JONG WAN;KIM, WOONG SUN;KO, MYOUNG GYUN;MOON, YEON KEON;MOON, JUN HO;KIM, TAE SUB