发明名称 METHOD OF PREPARING PASSIVATION LAYER IN ORGANIC DEVICE
摘要 A method of preparing a passivation layer in an organic device is provided to block external oxygen and moisture from being infiltrated into a nonvolatile polymer memory device and an organic light emitting diode by preparing the passivation layer with an atomic layer deposition method and a plasma processing method. A method of preparing a passivation layer in an organic device includes the steps of: adsorbing an organic metal source onto a surface of the organic device; injecting inert gas in order to remove the unabsorbed organic metal source; forming a metallic oxide layer on the surface of the organic device by injecting a source containing oxygen and a plasma and allowing the source and plasma to react a metal within the organic metal source; injecting the inert gas in order to remove a residual organic metal source without the metallic oxide layer; and plasma-processing the formed metallic oxide layer.
申请公布号 KR100840269(B1) 申请公布日期 2008.06.20
申请号 KR20070033114 申请日期 2007.04.04
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 PARK, JONG WAN;KIM, WOONG SUN;KO, MYOUNG GYUN;MOON, YEON KEON;MOON, JUN HO;KIM, TAE SUB
分类号 H05B33/04 主分类号 H05B33/04
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