| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, from which light emitted upwards is more than light emitted to a lower silicon substrate, i.e. the light-emitting efficiency is higher as compared with that of conventional examples, with its manufacturing cost reduced, and to provide its manufacturing method. <P>SOLUTION: The semiconductor light-emitting element includes a substrate; an active layer forming portion which contains an active layer formed on another main surface of the substrate with a substrate material of compound of a material different from the substrate; a plurality of holes passing through the active layer from the upper surface of the active layer forming portion; and void portions which are located between the active layer and substrate, corresponding to the positions of the holes and whose area is larger, as compared with the hole in a plan view. The void portion is formed extended on the lower portion of the active layer forming portion, and the lower portion of the extended active layer that forms a portion overlapping the region of the void portion is exposed, in a plan view. <P>COPYRIGHT: (C)2008,JPO&INPIT |
