| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve characteristics in a semiconductor device by reducing edge dislocation in the GaN layer of a semiconductor substrate. <P>SOLUTION: The semiconductor substrate has: an AlN layer 12 provided on a substrate 10; an Si-doped GaN layer 14 provided on the AlN layer 12; and an undoped GaN layer 16 provided on the Si-doped GaN layer 14. By the semiconductor substrate, the semiconductor device, and a method for manufacturing the semiconductor device, edge dislocation in the GaN layer is reduced, thus improving characteristics in the semiconductor device. <P>COPYRIGHT: (C)2008,JPO&INPIT |
