METHOD OF DRIVING MULTI-LEVEL VARIABLE RESISTIVE MEMORY DEVICE AND MULTI-LEVEL VARIABLE RESISTIVE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of driving a multi-level variable resistive memory device.

SOLUTION: The method of driving the multi-level variable resistive memory device includes: supplying a write current to the variable resistive memory cell so as to change resistance of a variable resistive memory cell; verifying whether or not changed resistance enters a predetermined resistance window; and supplying a write current having increased or decreased amount from the write current supplied most recently on the basis of the verification result so as to change resistance of the variable resistance memory cell.

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