| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of measuring a cell current highly precisely. SOLUTION: The semiconductor memory device comprises: a static type memory cell MC constituted of a plurality of MIS transistors; a local bit line LBL connected to the memory cell MC; a global bit line GBL connected to the local bit line LBL through a sense amplifier 12; an external power source terminal 20 from which the measuring voltage is supplied at the time of cell current measuring mode; and a switch circuit 32 for electrically connecting the external power source terminal 20 and the local bit line LBL at the time of cell current measuring mode. COPYRIGHT: (C)2008,JPO&INPIT
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