发明名称 METHOD OF FORMING SELF-ASSEMBLED MONOLAYER ON ITO FILM
摘要 Disclosed is a method of modifying the surface of an ITO (Indium Tin Oxide; In<SUB>2</SUB>O<SUB>3</SUB>-SnO<SUB>2</SUB>) film using new organic material to increase the properties of the ITO film. A method of forming a self-assembled monolayer on an ITO film to increase the work function of an ITO film for use in the transparent electrode of a display device and an ITO film having a self-assembled monolayer, manufactured using the above method, are provided. The ITO film having the self-assembled monolayer has an increased work function, and thus holes can be efficiently injected from the ITO to an organic layer. Thereby, ohmic contact between the organic layer and the electrode is realized, consequently improving the electrical properties of organic electronic devices.
申请公布号 US2008146011(A1) 申请公布日期 2008.06.19
申请号 US20070697395 申请日期 2007.04.06
申请人 KONKUK UNIVERSITY INDUSTRIAL COOPERATION CORP. 发明人 YOON YOUNG SOO;JEE SEUNG HYUN;KIM SOO HO;KO JAE HWAN
分类号 H01L21/20 主分类号 H01L21/20
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