| 摘要 |
A TFT(Thin Film Transistor) and an LCD(Liquid Crystal Display) having the same are provided to have a source electrode with a curved portion, to form plural prominence and depression portions to the inside of the curved portion and to form a drain electrode having prominence and depression portions corresponding to the prominence and depression portions to the inside of the curved portion. A gate electrode(60a) is formed on a substrate toward a direction. A gate insulating layer is formed on the substrate including the gate electrode. A semiconductor layer(63) is overlapped with the upper portion of the gate electrode. A source electrode(65a) is overlapped with the upper portion of the gate electrode, has a curved portion and also has plural prominence and depression members formed to the inside surface of the curved portion. A drain electrode(65b) is separated from the source electrode with a constant distance, has protrusion members engaged with the prominence and depression members of the source electrode, and inserted into the inside of the curved portion. The source electrode has at least one curved portion. The source electrode is formed in parallel or vertically to the gate line. |
