NON-VOLATILE MEMORY DEVICE CONTAINING ANILIN-BASED POLYMER AS AN ACTIVE LAYER

摘要

A non-volatile memory device including anilin-based polymer in an active layer is provided to obtain a current-voltage switching phenomenon by easily forming an anilin-based polymer compound by a process like spin coating. A non-volatile memory device includes an anilin-based polymer in an active layer indicated by the following chemical formula 1. Chemical formula 1, R1 and R3 can be the same or different from each other and are independently selected from a group of hydrogen, a hydroxyl group, a carboxyl group, a halogen atom, halide, a C1-50 alkyl group, a C1-50 alkoxy group, a C1-50 alkyl carboxyl group, a C1-50 alkyl ester group, a C1-50 alkyl hydroxyl group, a nitro C1-50 alkyl group, a cyano C1-50 alkyl group, a halo C1-50 alkyl group, a oxyhalo C1-50 alkyl group, a nitro C1-50 alkyl group, a cyanohalo C1-50 alkyl group, a phenyl group, an amino aryl group, an oxy aryl group, a halo aryl group, a nitro aryl group, a cyano aryl group, an oxyhalo C1-50 alkyl aryl group, a halo C1-50 alkyl aryl group, a nitrohalo C1-50 alkyl aryl group and a cyanohalo C1-50 alkyl aryl group wherein R1 and R3 are not hydrogen simultaneously. R2 and R4 can be the same or different from each other and are independently amino or imino, respectively. X and y are mole fractions wherein 0<x<=1.0 and 0<y<=1.0. The anilin-based polymer compound can be doped with an acid doping agent.