| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-frequency wave transmission line which can be realized by a silicon semiconductor process, without causing the high-frequency characteristics of a microstrip line to deteriorate. <P>SOLUTION: The high-frequency wave transmission line comprises a metal thin film 20, which is formed on a silicon semiconductor substrate 10 and constitutes a ground conductor in the microstrip line; an insulating film 30 which is formed on the metal thin film 20 and constitutes a substrate in the microstrip line; and a metal thick film 40, formed on the insulation film 30 and constitutes a strip conductor in the microstrip line. The metal thin film 20 has a first slit group 21, consisting of a plurality of slits at the center in the width direction of the metal thick film, having a width corresponding to the width of the strip conductor and immediately underneath the metal thick film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
