| 摘要 |
<P>PROBLEM TO BE SOLVED: To detect the ON fault of a MOS transistor for driving inside even in a semiconductor integrated circuit which incorporates a current detection function by the MOS transistor for driving and a MOS transistor for sensing. <P>SOLUTION: The drain voltage of the MOS transistor 11 for driving is taken into an ON state detection comparator 21 to detect whether the MOS transistor for driving is in an ON state. In the case the MOS transistor 11 for driving is in the ON state, an output from the ON state detection comparator 21 becomes a low level and a high-level signal is input to an ON fault detection AND gate 27 via a filter 26. At such a time, when a gate driving signal is at a low level (level for turning off each MOS), a high-level signal is input to the ON fault detection AND gate 27 via a NOT gate 28. Therefore, the output of the ON fault detection AND gate 27 becomes a high level, and the ON fault is detected. <P>COPYRIGHT: (C)2008,JPO&INPIT |
