| 摘要 |
A planarized nanowire structure and a method for planarizing a nanowire structure are presented. The method provides nanowires with tips, formed overlying a substrate. A first insulator layer is deposited partially covering the nanowires. The first insulator layer is coated with a spin-on insulator layer, completely covering the nanowires. In some aspects of the method, the spin-on insulator layer is annealed. The spin-on insulator layer is then polished with a slurry and, in response to the polishing, a planarized insulator surface is formed with exposed nanowire tips.
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