发明名称 TECHNIQUES FOR CONFINING ELECTRONS IN AN ION IMPLANTER
摘要 <p>Apparatus and a method for confining electrons in an ion implanter are disclosed. The apparatus and method comprise a first array of magnets (31) and a second array of magnets (32) positioned along at least a portion of a beam path (30), the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side.' At least one magnet (302) in the first array may have a pole facing an opposite pole of a corresponding magnet (302) in the second array, on the first and second arrays of magnets may collectively produce cusp magnetic fields to confine electrons in or near the beam path.</p>
申请公布号 WO2008073747(A1) 申请公布日期 2008.06.19
申请号 WO2007US86275 申请日期 2007.12.03
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;SMATLAK, DONNA, L.;ANGEL, GORDON, C.;DORAI, RAJESH 发明人 SMATLAK, DONNA, L.;ANGEL, GORDON, C.;DORAI, RAJESH
分类号 H01J37/02;H01J37/05;H01J37/317 主分类号 H01J37/02
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