| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solvent for a photoresist capable of forming a good pattern even in a thin film resist process at ≤160 nm. <P>SOLUTION: A resist material is provided which contains at least a high molecular compound containing a repeating unit derived from a methacrylate and/or acrylate having a carboxyl group substituted by an acid-labile group, and a first solvent having a lactone ring in which a total carbon number is 5-9. <P>COPYRIGHT: (C)2008,JPO&INPIT |
