| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element improved in luminous efficiency. <P>SOLUTION: The light-emitting element comprises an n-type first GaN layer (16) provided on a substrate (10), an n-type InGaN contact layer (18) provided on the first GaN layer (16), an n-type second GaN layer (20) provided on the InGaN contact layer (18), an active layer (22) provided on the second GaN layer, a p-type cladding layer (24) provided on the active layer (22), and an electrode (26) provided to contact with the InGaN contact layer (18). <P>COPYRIGHT: (C)2008,JPO&INPIT |
