发明名称 INTEGRATED CIRCUIT INCLUDING A MEMORY FABRICATED USING SELF-ALIGNED PROCESSING
摘要 An integrated circuit includes transistors in rows and columns providing an array, conductive lines in columns across the array, and resistivity changing material elements contacting the conductive lines and self-aligned to the conductive lines. The integrated circuit includes electrodes contacting the resistivity changing material elements, each electrode self-aligned to a conductive line and coupled to one side of a source-drain path of a transistor.
申请公布号 US2008142778(A1) 申请公布日期 2008.06.19
申请号 US20080020988 申请日期 2008.01.28
申请人 INFINEON TECHNOLOGIES AG 发明人 GRUENING-VON SCHWERIN ULRIKE;HAPP THOMAS
分类号 H01L45/00 主分类号 H01L45/00
代理机构 代理人
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