ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME

摘要

An organic light emitting diode display and a method for manufacturing the same are provided to minimize damage of a semiconductor by simultaneously forming a gate electrode, a gate insulating layer, and the semiconductor and protecting the semiconductor through a passivation layer, thereby realizing a high quality thin film transistor display. A first control electrode(124a) is formed on a substrate. A first gate insulating layer is formed on the first control electrode. A first semiconductor(151) is formed on the gate insulating layer. A passivation layer is formed on the semiconductor and has first and second contact holes to expose the first semiconductor. First and second ohmic contact members are formed on the passivation layer and connected to the first semiconductor through the first and second contact holes. A first input electrode(173a) is formed on the first ohmic contact member. A first output electrode(175a) is formed on the second ohmic contact member. An interlayer insulating layer is formed on the first input electrode and the first output electrode. A first electrode is formed on the interlayer insulating layer to be connected to the first output electrode through a contact hole. A second electrode faces the first electrode. A light emitting member(370) is formed between the first and second electrodes. The first control electrode, the first gate insulating layer, and the first semiconductor have the same pattern.