CLEANING COMPOSITION FOR REMOVING PHOTORESIST

摘要

A cleaning composition for removing photoresist includes a quaternary ammonium hydroxide, alkyl glycol aryl ether and derivatives thereof which is represented by the following formula?, and acetophenone and derivatives thereof which is represented by the following formula ?. Wherein R<SUB>1</SUB> is an aryl having 6-18 carbon atoms, R<SUB>2</SUB> is a H, C<SUB>1</SUB>-C<SUB>18 </SUB>alkyl or aryl having 6-18 carbon atoms, m=2-6, n=1-6, R<SUB>5</SUB> and R<SUB>6</SUB> is a H, hydroxyl, C<SUB>1</SUB>-C<SUB>2</SUB> alkyl, C<SUB>1</SUB>-C<SUB>2</SUB> alkoxyl or C<SUB>1</SUB>-C<SUB>2</SUB> hydroxyalkyl. The cleaning composition may clean photoresist or theother residue on the metal, metal alloy and dielectric substrate.