Verfahren zur Herstellung einer Halbleitervorrichtung mit einem Paar Strahlungsanschlüssen und einer Vielfalt von Außenverbindungen, die aus einem einzelnen Leiterrahmen geformt sind

摘要

A semiconductor device is disclosed wherein a pair of radiating terminals and a plurality of lead terminals are formed from a single lead frame. A hole or holes in each radiating terminal are formed with an equal width and in an equal pitch to those of gaps between the lead terminals, and the opposite sides of each hole of the radiating terminal are connected to each other by a support element. The support elements of the radiating terminals and support elements which interconnect the lead terminals are formed with an equal length and in an equal pitch to allow the support elements to be cut away by a plurality of punches which are arranged in an equal pitch and have an equal width.