MULTILAYER STRUCTURE HAVING HIGH SPIN INJECTION RATIO USING CONDUCTIVE NITRIDE AS A SPACER AND THE FABRICATION METHOD THEREOF

摘要

A structure of a multiple layer is provided to obtain a high spin injection efficiency when electrons having a specific spin direction are injected into a non-magnetic or magnetic semiconductor by using a conductive nitride as a spacer layer. A spacer layer(2) is formed on a semiconductor layer, made of a conductive nitride. A spin injection electrode layer(1) is formed on the conductive nitride spacer layer, made of a ferroelectric material. Transition metal can be doped into the conductive nitride spacer layer. The conductive nitride can be made of one selected from a group of TiN, TaN, NbN and ZrN.