| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of stably forming a predetermined shape p-side electrode having an AuBe layer without causing delay by eliminating Be oxide while keeping surface smoothness of a semiconductor layer. <P>SOLUTION: In the method, since the Be oxide formed in the AuBe layer 4 and its vicinity can be efficiently dissolved and eliminated in a first surface treatment step, a subsequent etching step can be executed without delay while preventing the influence of the Be oxide. Further, a KCN-based etchant is used for the etching step, thereby rapidly and stably forming the p-side electrode while maintaining the surface smoothness of the semiconductor layer in an excellent state. Still further, since the remaining Be oxide is completely eliminated by the second surface treatment step after the etching, the bad influence of the Be oxide in subsequent steps can be prevented. <P>COPYRIGHT: (C)2008,JPO&INPIT |
