| 摘要 |
PROBLEM TO BE SOLVED: To provide a visual examination method which enables the detection of a local flaw with high inspection precision while permitting the size irregularity of an inspection target such as an electrode pattern or the like in the visual examination of a semiconductor emission element or the like. SOLUTION: In a case that the planned shape of the inspection target subjected to quality judgment is a linear symmetric shape having at least one symmetric axis, the reference line corresponding to the symmetric axis of the inspection target is set in the image of the inspection target and one image of the inspection target based on the reference line is compared with the other image of the inspection target to judge the quality of the inspection target. COPYRIGHT: (C)2008,JPO&INPIT
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