发明名称 METHOD OF MANUFACTURING FERROELECTRIC MEMORY
摘要 PROBLEM TO BE SOLVED: To prevent a first electrode from being damaged, by preventing a peel-off between a third sub electrode film and a fourth sub electrode film constituting the first electrode when using a metal compound film containing Sr, Bi and Ta as a material of a ferroelectric film. SOLUTION: When forming a ferroelectric film 45, in a third step, a first precursor ferroelectric film 43 is formed with an ST film or SrO<SB>X</SB>film as a material on a first electrode 31. In a fourth step, a second precursor ferroelectric film 43 is then formed with a compound containing Sr, Bi and Ta as a material. As a result, since the first precursor ferroelectric film is functioned as a barrier, when forming the second precursor ferroelectric film, raw material gases containing components of Ta and Bi that are raw material gases are not brought in contact with the first electrode. Therefore, the components of Ta and Bi are not diffused over the first electrode, so that the peel-off is prevented. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008141117(A) 申请公布日期 2008.06.19
申请号 JP20060328275 申请日期 2006.12.05
申请人 OKI ELECTRIC IND CO LTD 发明人 ABE KAZUHIDE
分类号 H01L21/8246;H01L21/316;H01L27/105 主分类号 H01L21/8246
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