| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element having an electrode having less stress while provided with high diffusion preventing effect, and a manufacturing method the semiconductor element. SOLUTION: An electrode 44 to be formed on the semiconductor element 51 is divided into a first electrode layer 30 having ohmic characteristics through heat treatment and a second electrode layer 36 not subject to heat treatment, and thus, a stress generated in heat treatment can be reduced. Further, a barrier layer is made to be thin by dividing it into a first barrier layer 26 and a second barrier layer 28 to reduce a stress, and an intermediate layer 27 provided between the first barrier layer 26 and the second barrier layer 28 is eliminated by diffusion in solder bonding. In this way, the barrier layer works as a thick barrier layer 23, and thus, high diffusion preventing effect can be obtained. COPYRIGHT: (C)2008,JPO&INPIT
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