| 摘要 |
Means for Solution: This interposer ( 10 ) comprises the silicon substrate ( 12 ), a plurality of through-hole conductors ( 20 ) formed on the above-described silicon substrate, and a capacitor ( 15 ) formed with the upper electrodes ( 14 ) and the lower electrodes ( 18 ) formed by extending the land portions of the above-described through-hole conductors and the dielectric layer ( 16 ) formed between the both electrodes. The rewiring layers ( 23 - 1, 23 - 2 ) formed as desired are formed on the layers other than the above-described capacitor layer.
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