| 摘要 |
Provided is a semiconductor chip ( 1 ) including: at least one fuse element ( 21 ); a fuse opening ( 17 ) formed above the fuse element ( 21 ); and a discharge electrode ( 31 ) that is formed below a bottom portion ( 17 a) of the fuse opening ( 17 ), and is formed in one of the same layer with the fuse element ( 21 ) and the above layer of the fuse element ( 21 ). Accordingly, the current caused to flow due to the electrostatic discharge generated at the time of assembling the semiconductor chip can be discharged through the discharge electrode ( 31 ). As a result, the current caused to flow due to the electrostatic discharge generated at the time of assembling the semiconductor chip can be prevented from being discharged through the fuse element, whereby a problem in that a functional failure occurs in the semiconductor chip can be solved.
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