发明名称 Method for Manufacturing Dielectric Thin Film Capacitor
摘要 A method for manufacturing a dielectric thin film capacitor without causing cracks in a protective layer which covers a capacitor portion is provided. The method for manufacturing the dielectric thin film capacitor includes a step of forming a tapered resist pattern on a capacitor structure and a dry etching step so as to taper the end portion of the capacitor. Furthermore, a heating treatment is conducted after tapering.
申请公布号 US2008145996(A1) 申请公布日期 2008.06.19
申请号 US20070954696 申请日期 2007.12.12
申请人 NOMURA MASANOBU;TAKESHIMA YUTAKA;HAGI TOSHIO;NAKAGAWA NAOTOSHI 发明人 NOMURA MASANOBU;TAKESHIMA YUTAKA;HAGI TOSHIO;NAKAGAWA NAOTOSHI
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项
地址
您可能感兴趣的专利