| 摘要 |
The present invention relates to a semiconductor memory device and more particularly there is disclosed a voltage control circuit, a voltage control method and a semiconductor memory device having the voltage control circuit which can reduce leakage currents and improve precharge performance. The present invention includes a voltage control circuit providing different voltages as a precharge voltage in accordance with an active state and a standby stage by arranging the semiconductor memory device in a peripheral region, whereby the different voltages can be provided as a precharge voltage in accordance with the active state and the standby state and thus leakage current is reduced and area efficiency is enhanced.
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