发明名称 |
METHOD FOR FABRICATING PIXEL CELL OF CMOS IMAGE SENSOR |
摘要 |
The present invention provides a method for fabricating a pixel cell of CMOS image sensor, comprising: preparing a semiconductor substrate divided into region I and region II; forming an insulation layer on the surface of the semiconductor substrate in the region I and a gate dielectric layer on the surface of the semiconductor substrate in the region II; forming a poly-silicon gate on the surface of the semiconductor substrate in the region II; forming a deep doped well in the region I through an ion implantation with high energy; performing an ion implantation with low energy in the region I and an ion implantation for lightly doped source/drain in the region II simultaneously; and forming source/drain regions in the semiconductor substrate in the region II.
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申请公布号 |
US2008145963(A1) |
申请公布日期 |
2008.06.19 |
申请号 |
US20070871121 |
申请日期 |
2007.10.11 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
YANG JIANPING;HUO JIEGUANG |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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