发明名称 |
TREATMENT METHOD OF SEMICONDUCTOR, METHOD FOR MANUFACTURING MOS, AND MOS STRUCTURE |
摘要 |
The method of the present invention includes providing a semiconductor substrate with a recess; performing a pre-cleaning step on the semiconductor substrate; and performing a first reduction step, a lateral etching step and a second reduction step on the semiconductor substrate. The MOS structure includes a semiconductor substrate, a gate structure on the semiconductor substrate, a pair of recesses with beak sections extending to and under the gate structure, and a strain material filling the recess. The recess inside the semiconductor substrate processed by the method including the lateral etching step forms a beak section.
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申请公布号 |
US2008142886(A1) |
申请公布日期 |
2008.06.19 |
申请号 |
US20060611891 |
申请日期 |
2006.12.18 |
申请人 |
LIAO CHIN-I;CHIEN CHIN-CHENG |
发明人 |
LIAO CHIN-I;CHIEN CHIN-CHENG |
分类号 |
H01L27/00;H01L21/302 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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