MEMORY ERASE USING DISCHARCHING OF CHARGE STORAGE DEVICE

摘要

A memory erase management system (500) is provided, including providing a resistive change memory cell (102), coupling a first line (118) to the resistive change memory cell (102), coupling a line buffer (140) to the first line (118), providing a charge storage device (144) coupled to the line buffer (140), and performing a single pulse erase of the resistive change memory cell (102) by discharging a current (204) from the charge storage device (144) through the resistive change memory cell (102).