| 摘要 |
<p>Provided is a nonvolatile storage device having advantages for miniaturization, a small initial threshold value variance, high write efficiency, with no erasure failure and storage failure. The nonvolatile storage device is provided with a laminated film, which is arranged to extend from between a semiconductor substrate and a gate electrode to over at least a surface on the side of a first impurity diffusion region on the gate electrode, and is provided with a charge accumulating layer and a tunnel insulating film in this order from the gate electrode side.</p> |
