发明名称 MANUFACTURING DEVICES USING A DONEE LAYER CLEAVED FROM A CRYSTALLINE DONOR
摘要 Various embodiments of fabricated crystalline-based structures for the electronics, optoelectronics and optics industries are disclosed. Each of these structures is created in part by cleaving a donee layer from a crystalline donor, such as a micaceous/lamellar mass comprising a plurality of lamelliform sheets separable from each other along relatively weak cleavage planes. Once cleaved, one or more of these lamelliform sheets become the donee layer. The donee layer may be used for a variety of purposes, including a crystalline layer for supporting heteroepitaxial growth of one or more semiconductor layers thereon, an insulating layer, a barrier layer, a planarizing layer and a platform for creating useful structures, among others.
申请公布号 WO2007118081(A8) 申请公布日期 2008.06.19
申请号 WO2007US65864 申请日期 2007.04.03
申请人 VERSATILIS LLC;JAIN, AJAYKUMAR, R. 发明人 JAIN, AJAYKUMAR, R.
分类号 G03G7/00 主分类号 G03G7/00
代理机构 代理人
主权项
地址