METHOD OF FORMING A PATTERN AND METHOD OF MANUFACTURING A CAPACITOR USING THE SAME

摘要

A pattern forming method and a capacitor forming method using the same are provided to remove a buffer film pattern with an oxide film pattern by performing a wet-etching process after a conductive film pattern is formed. An oxide film pattern with an aperture is formed on a substrate. A conductive film with a uniform thickness is formed on the oxide film pattern having the aperture. A buffer film pattern(266) is buried in the aperture of the oxide film pattern, where the conductive film is formed. The buffer film pattern contains a siloxane polymer with a predetermined structural expression. The conductive film is removed from the oxide film pattern by using the buffer film pattern as an etching mask.