| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of inhibiting deterioration of magnetic characteristics by protecting a magnetoresistance effect element from outgas of an interlayer film. SOLUTION: The method includes steps of forming a material layer which is used for the magnetoresistance effect element 23, forming the magnetoresistance effect element 23 by processing at least a part of the material layer, and forming a protecting film 24 covering sides of the magnetoresistance effect element 23 under consistent vacuum condition within a device which is formed by processing at least a part of the material layer. COPYRIGHT: (C)2008,JPO&INPIT
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