发明名称 Temperature-sensitive current source
摘要 A temperature-sensitive current source includes a first MOS transistor having a source coupled to a first voltage; a second MOS transistor having a source coupled to the first voltage, and a gate coupled to a gate of the first MOS transistor, such that a current output at a drain of the second MOS transistor mirrors a current passing across the first MOS transistor; and a resistor coupled between the source and a drain of the first MOS transistor in parallel, such that the current passing across the first MOS transistor is substantially larger than a current passing through the resistor, wherein the first and second MOS transistors operate in a saturation mode, such that the output current at the drain of the second MOS transistor is responsive to a change of temperature.
申请公布号 US2008143449(A1) 申请公布日期 2008.06.19
申请号 US20060638186 申请日期 2006.12.13
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHUNG SHINE;HUNG JONATHAN
分类号 H03B5/04;H03K3/42 主分类号 H03B5/04
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